NSN 5310-15-101-3300, 5310151013300
NUT (1), PLAIN, HEX

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III SEMICONDUCTOR MATERIAL: (CTMZ) SILICON
CURRENT RATING PER CHARACTERISTIC: (CTQX) 10.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: (CBBL) HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: (ABBH) METAL
INTERNAL CONFIGURATION: (ALAS) JUNCTION CONTACT
OVERALL DIAMETER: (ADAV) 0.230 INCHES MAXIMUM
OVERALL LENGTH: (ABHP) 0.210 INCHES MAXIMUM
MOUNTING METHOD: (AXGY) TERMINAL
SEMICONDUCTOR MATERIAL: (CTMZ) SILICON
SPECIAL FEATURES: (FEAT) MINIMUM VOLTAGE; JUNCTION PATTERN ARRANGEMENT: PNP
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: (CTQN) 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
TERMINAL CIRCLE DIAMETER: (AYQS) 0.100 INCHES NOMINAL
TERMINAL LENGTH: (ABJT) 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: (TTQY) 3 UNINSULATED WIRE LEAD
CURRENT RATING PER CHARACTERISTIC: (CTQX) 10.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM