NSN 5841-15-102-2300, 5841151022300
MAPPER TRANSMITTER

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III SEMICONDUCTOR MATERIAL: (CTMZ) SILICON
CURRENT RATING PER CHARACTERISTIC: (CTQX) 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: (CBBL) HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: (ABBH) CERAMIC AND PLASTIC
INTERNAL CONFIGURATION: (ALAS) JUNCTION CONTACT
OVERALL DIAMETER: (ADAV) 0.192 INCHES MINIMUM AND 0.222 INCHES MAXIMUM
OVERALL LENGTH: (ABHP) 0.120 INCHES MINIMUM AND 0.240 INCHES MAXIMUM
MOUNTING METHOD: (AXGY) TERMINAL
POWER RATING PER CHARACTERISTIC: (CTRD) 250.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: (CTMZ) SILICON
SPECIAL FEATURES: (FEAT) JUNCTION PATTERN ARRANGEMENT: NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: (CTQN) 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
TERMINAL CIRCLE DIAMETER: (AYQS) 0.100 INCHES NOMINAL
TERMINAL LENGTH: (ABJT) 0.400 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: (TTQY) 3 UNINSULATED WIRE LEAD
POWER RATING PER CHARACTERISTIC: (CTRD) 250.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM