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NSN 5961-00-922-2850, 5961009222850
SEMICONDUCTOR DEVICE,DIODE

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 009222850
Codification Country
United States
Item Name Code
INC 20589
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
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DLMS® Summary

National Stock Number 5961-00-922-2850

National Stock Number (NSN) 5961-00-922-2850, or NIIN 009222850, (semiconductor device,diode) was assigned April 24, 1968 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are no manufacturer part numbers associated to this NSN. ISO Group has several sources of supply for this NSN.

This part number has not been procured by the US Government in over 5 years.

This NSN is assigned to Item Name Code (INC) 20589. [A TWO ELECTRODE SEMICONDUCTOR DEVICE HAVING AN ASYMMETRICAL VOLTAGE - CURRENT CHARACTERISTIC. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES:LIGHT EMITTING DIODE AND SEMICONDUCTOR DEVICE,PHOTO. FOR ITEMS CONTAINING MATERIAL SUCH AS SELENIUM AND COPPER OXIDE, SEE RECIFIER, METALLIC.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961009222850 contains an unknown precious metal.

This NSN is associated to Schedule B 8541100070: diodes, other than photosensitve or led, with a maximum current of 0.5 a or less. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 150.0 DEG CELSIUS CASE
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
CURRENT RATING PER CHARACTERISTIC
(CTQX) 75.00 MILLIAMPERES FORWARD CURRENT, AVERAGE ABSOLUTE
CURRENT RATING PER CHARACTERISTIC
(CTQX) 75.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED
(CBBL) HERMETICALLY SEALED CASE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION
(ALAZ) DO-7
OVERALL DIAMETER
(ADAV) 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH
(ABHP) 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
MATERIAL
(MATT) GLASS INCLOSURE
MATERIAL
(MATT) SILICON SEMICONDUCTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 150.0 CELSIUS CASE
MOUNTING METHOD
(AXGY) TERMINAL
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 70.0 MAXIMUM REVERSE VOLTAGE, PEAK
TERMINAL LENGTH
(ABJT) 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY
(TTQY) 2 UNINSULATED WIRE LEAD
INCLOSURE MATERIAL
(ABBH) GLASS

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