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NSN 5961-00-927-5107, 5961009275107
SEMICONDUCTOR DEVICES,UNITIZED

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 009275107
Codification Country
United States
Item Name Code
INC 61962
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
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DLMS® Summary

National Stock Number 5961-00-927-5107

National Stock Number (NSN) 5961-00-927-5107, or NIIN 009275107, (semiconductor devices,unitized) was assigned August 12, 1966 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 5 manufacturer part numbers associated with this NSN. 4 of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 7 suppliers. Today, 6 suppliers are listed as Active suppliers for this NSN. Of the active suppliers, 3 suppliers are deemed design controlled or valid supply parts.

This part number has not been procured by the US Government in over 5 years.

This NSN is unique to one weapons system.

Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Aug 19, 2015, this NSN's acquisition method was noted as: Acquire directly from the actual manufacturer, whether or not the prime contractor is the actual manufacturer. The annual buy value of this part falls below the screening threshold of $10,000 but it has been screened for known source(s). (NOTE: This code shall not be used when screening parts entering the inventory. It shall not be assigned in preference to or supersede any other AMSC.) Valid AMCs: 1, 2, 3, 4 and 5.

This NSN is assigned to Item Name Code (INC) 61962. [TWO OR MORE DISCRETE SEMICONDUCTOR DEVICES SUCH AS DIODE(S) AND/OR TRANSISTOR(S), PERMANENTLY CASED, ENCAPSULATED, OR POTTED TOGETHER TO FORM AN INSEPARABLE UNIT. EXCLUDES:DEVICES HAVING ONE OR MORE COMPONENTS OTHER THAN SEMICONDUCTOR DEVICES. THE INDIVIDUALLY DISTINCT DEVICES FORMING THE UNIT MAY BE INTERNALLY CONNECTED. THE UNIT IN ITSELF DOES NOT PERFORM A COMPLETE SPECIFIC FUNCTION AND CANNOT BE ASSIGNED A MORE DEFINITE ITEM NAME. IT MAY INCLUDE OR CONSIST OF INSEPARABLE MATCHED PAIRS. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. FOR INTERCONNECTED ITEMS ARRANGED IN STACK(S), SEE RECTIFIER, SEMICONDUCTOR DEVICE. FOR ITEMS FORMED ON OR WITHIN A SEMICONDUCTOR MATERIAL SUBSTRATE, FORMED ON AN INSULATING SUBSTRATE OR FORMED ON A COMBINATION OF BOTH OF THESE TYPES, SEE MICROCIRCUIT (AS MODIFIED). EXCLUDES:NETWORK (AS MODIFIED); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; AND SEMICONDUCTOR DEVICE ASSEMBLY. DO NOT USE IF MORE SPECIFIC NAME APPLIES.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961009275107 contains an unknown precious metal.

This NSN is associated to Schedule B 8541500080: semiconductor devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

POWER RATING PER CHARACTERISTIC
(CTRD) 0.6 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 200.0 DEG CELSIUS AMBIENT AIR
COMPONENT NAME AND QUANTITY
(ASKA) 2 TRANSISTOR
FEATURES PROVIDED
(CBBL) HERMETICALLY SEALED CASE
INCLOSURE MATERIAL
(ABBH) METAL
OVERALL DIAMETER
(ADAV) 0.370 INCHES MAXIMUM
OVERALL LENGTH
(ABHP) 0.260 INCHES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 200.0 CELSIUS AMBIENT AIR
MOUNTING METHOD
(AXGY) TERMINAL
SPECIAL FEATURES
(FEAT) ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
POWER RATING PER CHARACTERISTIC
(CTRD) 0.6 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER
(AYQS) 0.200 INCHES NOMINAL
TERMINAL LENGTH
(ABJT) 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY
(TTQY) 6 UNINSULATED WIRE LEAD
TRANSFER RATIO
(CTRK) 0.9 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR

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