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NSN 5961-00-935-5043, 5961009355043
Cancelled -> Replaced by 5961000766071

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 009355043
Codification Country
United States
Item Name Code
INC 33096
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
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DLMS® Summary

National Stock Number 5961-00-935-5043

National Stock Number (NSN) 5961-00-935-5043, or NIIN 009355043, (semiconductor device,thyristor) was assigned March 11, 1968 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN replaces 1 stock number, 5961000766071.

There are 3 manufacturer part numbers associated with this NSN. 2 of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 2 suppliers. Today, one supplier is listed as an Active supplier for this NSN. Of the active suppliers, there are no suppliers that are deemed design controlled or valid supply parts.

This part number has not been procured by the US Government in over 5 years.

Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Aug 02, 2006, this NSN's acquisition method was noted as: Suitable for Competitive Acquisition. (Potential sources shall include dealers/distributors.) The Government has unlimited rights to the technical data, and the data package is complete. Valid AMCs: 1 and 2.

This NSN is assigned to Item Name Code (INC) 33096. [A BISTABLE SEMICONDUCTOR DEVICE COMPRISING THREE OR MORE JUNCTIONS WHICH IS NORMALLY A NONCONDUCTOR UNTIL THE APPLICATION OF A SIGNAL TO A GATE TERMINAL, AT WHICH TIME THE DEVICE SWITCHES TO THE CONDUCTIVE STATE. INCLUDES DEVICES CAPABLE OF BEING SWITCHED BACK TO THE NONCONDUCTIVE STATE UPON APPLICATION OF A DIFFERENT SIGNAL TO THE SAME OR ANOTHER GATE TERMINAL. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961009355043 contains an unknown precious metal.

This NSN is associated to Schedule B 8541300080: thyristors, diacs & triacs, other than photosensitive devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

POWER RATING PER CHARACTERISTIC
(CTRD) 0.5 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR BLANK
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 100.0 DEG CELSIUS JUNCTION
CURRENT RATING PER CHARACTERISTIC
(CTQX) 7.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE
(ALBA) ANODE
CURRENT RATING PER CHARACTERISTIC
(CTQX) 7.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED
(CBBL) HERMETICALLY SEALED CASE
INCLOSURE MATERIAL
(ABBH) METAL
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACT
OVERALL DIAMETER
(ADAV) 0.438 INCHES NOMINAL
OVERALL LENGTH
(ABHP) 0.535 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS
(CCDG) 0.559 INCHES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 100.0 CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY
(AKPV) 1
MOUNTING METHOD
(AXGY) THREADED STUD
NOMINAL THREAD SIZE
(CQJX) 0.250 INCHES
POWER RATING PER CHARACTERISTIC
(CTRD) 0.5 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
SPECIAL FEATURES
(FEAT) JUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA
(ZZZK) 80131-RELEASE5700 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 200.0 MAXIMUM BREAKOVER VOLTAGE, DC
TERMINAL TYPE AND QUANTITY
(TTQY) 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR
(THSD) UNF
III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON

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