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NSN 5961-01-307-7191, 5961013077191
SEMICONDUCTOR DEVICE,THYRISTOR

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 013077191
Codification Country
United States
Item Name Code
INC 33096
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
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DLMS® Summary

National Stock Number 5961-01-307-7191

National Stock Number (NSN) 5961-01-307-7191, or NIIN 013077191, (semiconductor device,thyristor) was assigned September 16, 1989 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 6 manufacturer part numbers associated with this NSN. 2 of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 5 suppliers. Today, 3 suppliers are listed as Active suppliers for this NSN. Of the active suppliers, 2 suppliers are deemed design controlled or valid supply parts. ISO Group has several sources of supply for this NSN.

This part number has not been procured by the US Government in over 5 years.

This NSN is somewhat common among different platforms, belonging to 5 different weapons systems.

There has been a small amount of demand for this national stock number. The demand for this NSN originated from less than 5 countries. Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Aug 02, 2006, this NSN's acquisition method was noted as: Acquire directly from the actual manufacturer, whether or not the prime contractor is the actual manufacturer. This part requires engineering source approval by the design control activity in order to maintain the quality of the part. An alternate source must qualify in accordance with the design control activity's procedures, as approved by the cognizant Government engineering activity. Valid AMCs: 1, 2, 3, 4 and 5.

This NSN is assigned to Item Name Code (INC) 33096. [A BISTABLE SEMICONDUCTOR DEVICE COMPRISING THREE OR MORE JUNCTIONS WHICH IS NORMALLY A NONCONDUCTOR UNTIL THE APPLICATION OF A SIGNAL TO A GATE TERMINAL, AT WHICH TIME THE DEVICE SWITCHES TO THE CONDUCTIVE STATE. INCLUDES DEVICES CAPABLE OF BEING SWITCHED BACK TO THE NONCONDUCTIVE STATE UPON APPLICATION OF A DIFFERENT SIGNAL TO THE SAME OR ANOTHER GATE TERMINAL. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961013077191 does not contain precious metals.

This NSN is associated to Schedule B 8541300080: thyristors, diacs & triacs, other than photosensitive devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

POWER RATING PER CHARACTERISTIC
(CTRD) 40.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR BLANK
CURRENT RATING PER CHARACTERISTIC
(CTQX) 100.00 AMPERES PEAK FORWARD SURGE CURRENT ABSOLUTE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 100.0 DEG CELSIUS CASE
III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE
(ALBA) COLLECTOR
CURRENT RATING PER CHARACTERISTIC
(CTQX) 100.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE
FEATURES PROVIDED
(CBBL) HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL
(ABBH) METAL
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACT
OVERALL DIAMETER
(ADAV) 0.366 INCHES MAXIMUM
OVERALL LENGTH
(ABHP) 0.180 INCHES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 100.0 CELSIUS CASE
MOUNTING METHOD
(AXGY) TERMINAL
POWER RATING PER CHARACTERISTIC
(CTRD) 40.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
SPECIAL FEATURES
(FEAT) JUNCTION PATTERN ARRANGEMENT: PNPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 700.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 700.0 MAXIMUM NONREPETITIVE PEAK OFF-STATE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
TERMINAL CIRCLE DIAMETER
(AYQS) 0.210 INCHES MAXIMUM
TERMINAL LENGTH
(ABJT) 1.015 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY
(TTQY) 3 UNINSULATED WIRE LEAD

Manufacturer Part Numbers

112000081

RNCC
7
RNVC
2
605012571

RNCC
3
RNVC
2
605112571

RNCC
5
RNVC
2
72715

RNCC
5
RNVC
9
S2600M

RNCC
5
RNVC
9
SES539

RNCC
3
RNVC
2
72715

RNCC
C
RNVC
1

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