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NSN 5961-00-436-2223, 5961004362223
SEMICONDUCTOR DEVICE,THYRISTOR

Federal Supply Classification
FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number
NIIN 004362223
Codification Country
United States
Item Name Code
INC 33096
Criticality
(X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code
(N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.
Availability: Readily Available Qualified Suppliers: Currently qualifying suppliers

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DLMS® Summary

National Stock Number 5961-00-436-2223

National Stock Number (NSN) 5961-00-436-2223, or NIIN 004362223, (semiconductor device,thyristor) was assigned March 28, 1969 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 3 manufacturer part numbers associated with this NSN. 3 of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by 3 suppliers. Today, one supplier is listed as an Active supplier for this NSN. Of the active suppliers, only one supplier is deemed design controlled or valid supply parts.

This part number has not been procured by the US Government in over 5 years.

Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Aug 02, 2006, this NSN's acquisition method was noted as: Acquire directly from the actual manufacturer, whether or not the prime contractor is the actual manufacturer. The annual buy value of this part falls below the screening threshold of $10,000 but it has been screened for known source(s). (NOTE: This code shall not be used when screening parts entering the inventory. It shall not be assigned in preference to or supersede any other AMSC.) Valid AMCs: 1, 2, 3, 4 and 5.

This NSN is assigned to Item Name Code (INC) 33096. [A BISTABLE SEMICONDUCTOR DEVICE COMPRISING THREE OR MORE JUNCTIONS WHICH IS NORMALLY A NONCONDUCTOR UNTIL THE APPLICATION OF A SIGNAL TO A GATE TERMINAL, AT WHICH TIME THE DEVICE SWITCHES TO THE CONDUCTIVE STATE. INCLUDES DEVICES CAPABLE OF BEING SWITCHED BACK TO THE NONCONDUCTIVE STATE UPON APPLICATION OF A DIFFERENT SIGNAL TO THE SAME OR ANOTHER GATE TERMINAL. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961004362223 contains an unknown precious metal.

This NSN is associated to Schedule B 8541300080: thyristors, diacs & triacs, other than photosensitive devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on .


Technical Characteristics

CURRENT RATING PER CHARACTERISTIC
(CTQX) 150.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 6.00 MILLIAMPERES MAXIMUM REPETITIVE PEAK REVERSE CURRENT AND 40.00 MILLIAMPERES MAXIMUM GATE TRIGGER CURRENT, DC AND 50.00 MILLIAMPERES MAXIMUM HOLDING CURRENT, DC
FEATURES PROVIDED
(CBBL) HERMETICALLY SEALED CASE AND MOUNTING HARDWARE
INCLOSURE MATERIAL
(ABBH) METAL
INTERNAL CONFIGURATION
(ALAS) JUNCTION CONTACT
OVERALL LENGTH
(ABHP) 0.505 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS
(CCDG) 0.544 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT
(CTSG) 100.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY
(AKPV) 1
MOUNTING METHOD
(AXGY) THREADED STUD
NOMINAL THREAD SIZE
(CQJX) 0.250 INCHES
SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
SPECIAL FEATURES
(FEAT) JUNCTION PATTERN ARRANGEMENT: PNPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC
(CTQN) 1.4 MAXIMUM FORWARD VOLTAGE, PEAK AND 2.0 MAXIMUM GATE TRIGGER VOLTAGE, DC AND 2.2 MAXIMUM ON-STATE VOLTAGE, PEAK
TERMINAL TYPE AND QUANTITY
(TTQY) 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR
(THSD) UNF
III SEMICONDUCTOR MATERIAL
(CTMZ) SILICON
CURRENT RATING PER CHARACTERISTIC
(CTQX) 150.00 AMPERES FORWARD CURRENT, AVERAGE PRESET AND 6.00 MILLIAMPERES FORWARD CURRENT, AVERAGE NANOAMPERES AND 40.00 MILLIAMPERES FORWARD CURRENT, TOTAL RMS PRESET AND 50.00 MILLIAMPERES FORWARD CURRENT, TOTAL RMS PEAK

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C234EX16

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SDS236

RNCC
5
RNVC
9
SDS236

RNCC
5
RNVC
2

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