NSN 5961-01-048-5634, 5961010485634
TRANSISTOR

Federal Supply Classification: FSC 5961 - Semiconductor Devices and Associated Hardware
National Item Identification Number: NIIN 010485634
Codification Country: United States
Item Name Code: INC 20588
Criticality: (X) This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application.
Hazardous Material Indicator Code: (N) There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials.

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DLMS^® Summary

National Stock Number 5961-01-048-5634

National Stock Number (NSN) 5961-01-048-5634, or NIIN 010485634, (transistor) was assigned September 28, 1977 in the Federal Logistics Information System (FLIS). This NIIN is Available for Manual Assignment. This NSN does not replace any other NSNs.

There are 2 manufacturer part numbers associated with this NSN. One of those part number(s) are considered obsolete. The manufacturer part numbers were originally supplied by one supplier. Today, there are no suppliers listed as an Active supplier for this NSN. Of the active suppliers, there are no suppliers that are deemed design controlled or valid supply parts. ISO Group has several sources of supply for this NSN.

This part number has not been procured by the US Government in over 5 years.

Based on a planned procurement review by the Primary Inventory Control Activity (PICA) on Oct 19, 2016, this NSN's acquisition method was noted as: Acquire directly from the actual manufacturer, whether or not the prime contractor is the actual manufacturer. The data needed to produce this item from additional sources is not physically available. Valid AMCs: 3, 4 and 5.

This NSN is assigned to Item Name Code (INC) 20588. [AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES:SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.]. This item does not have a nuclear hardened feature or any other critical feature such as tolerance, fit restriction or application. There is no data in the HMIRS and the NSN is in an FSC not generally suspected of containing hazardous materials. NSN 5961010485634 contains an unknown precious metal.

This NSN is associated to Schedule B 8541500080: semiconductor devices, nesoi. The Schedule B End Use is listed as semiconductors. NAICS classification category 334413: semiconductor and related device manufacturing.

This information was last updated on Sep 01, 2024.

Technical Characteristics

III SEMICONDUCTOR MATERIAL: (CTMZ) SILICON
CURRENT RATING PER CHARACTERISTIC: (CTQX) 1.00 MILLIAMPERES MAXIMUM GATE CURRENT AND 30.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
FEATURES PROVIDED: (CBBL) HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: (ABBH) METAL
OVERALL DIAMETER: (ADAV) 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: (ABHP) 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
MOUNTING METHOD: (AXGY) TERMINAL
POWER RATING PER CHARACTERISTIC: (CTRD) 200.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: (CTMZ) SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: (CTQN) 15.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 15.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
TERMINAL TYPE AND QUANTITY: (TTQY) 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: (TEST) 13643-12638-UB-B2 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING)
POWER RATING PER CHARACTERISTIC: (CTRD) 200.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE
CURRENT RATING PER CHARACTERISTIC: (CTQX) 1.00 MILLIAMPERES SOURCE CUTOFF CURRENT MINOR AND 30.00 MILLIAMPERES ZERO-GATE-VOLTAGE SOURCE CURRENT MEGAWATTS