NSN 2310-15-101-9904, 2310151019904
AUTOVETTURA CON ALL

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III SEMICONDUCTOR MATERIAL: (CTMZ) SILICON
CURRENT RATING PER CHARACTERISTIC: (CTQX) 80.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
END ITEM IDENTIFICATION: (AGAV) TD-1159
FEATURES PROVIDED: (CBBL) HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: (ABBH) METAL
INTERNAL CONFIGURATION: (ALAS) JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: (ALAZ) TO-92
OVERALL DIAMETER: (ADAV) 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
OVERALL LENGTH: (ABHP) 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: (CTSG) 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: (AXGY) TERMINAL
POWER RATING PER CHARACTERISTIC: (CTRD) 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: (CTMZ) SILICON
SPECIAL FEATURES: (FEAT) JUNCTION PATTERN ARRANGEMENT: PNP
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: (CTQN) 12.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 12.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS
TERMINAL CIRCLE DIAMETER: (AYQS) 0.105 INCHES MAXIMUM
TERMINAL LENGTH: (ABJT) 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: (TTQY) 3 UNINSULATED WIRE LEAD
CURRENT RATING PER CHARACTERISTIC: (CTQX) 80.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM
POWER RATING PER CHARACTERISTIC: (CTRD) 350.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE